Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X2)-B |
Dual-N+P |
±20V |
8V（±V） |
0.8/-0.8V |
5.9/-4.1A |
|
36/97(mΩ) |
32/69(mΩ) |
Trench |
Detailed parameter description
- **V_DS (drain-source voltage)**: ±20V
The maximum voltage that the MOSFET drain and source can withstand, positive and negative voltage range.
- **V_GS (gate-source voltage)**: ±8V
The maximum voltage allowed between the MOSFET gate and source.
- **V_th (gate threshold voltage)**:
- N-channel: 0.8V
- P-channel: -0.8V
The minimum gate-source voltage required to make the MOSFET start to conduct. N-channel and P-channel MOSFETs have different threshold voltages.
- **R_DS(ON)（Drain-Source On Resistance）**:
- N-channel:
- 36mΩ @ V_GS = 4.5V
- 32mΩ @ V_GS = 10V
- P-channel:
- 97mΩ @ V_GS = 4.5V
- 69mΩ @ V_GS = 10V
The resistance between the drain and source of the MOSFET in the on state. Lower R_DS(ON) values indicate higher switching efficiency and lower power losses.
- **I_D（Continuous Drain Current）**:
- N-channel: 5.9A
- P-channel: -4.1A
The maximum continuous drain current that the MOSFET can withstand. N-channel and P-channel MOSFETs have different current handling capabilities.
- **Technology**: Trench
Using Trench technology, providing low on-resistance and good current handling capability.
Domain and module applications：
Applications
The VBBD5222 MOSFET is suitable for a variety of application scenarios that require a dual MOSFET configuration, especially in environments that require positive and negative voltage operation and efficient switching performance:
1. **Power Management**:
- **DC-DC Converter**: As a switching element, it is suitable for efficient power conversion in DC-DC converters, especially in applications that require positive and negative voltage conversion.
- **Power Switch**: Used in various power management applications, especially in the case of positive and negative voltage inputs, such as bipolar power systems.
2. **Motor Control**:
- **H-Bridge Circuit**: In the H-bridge circuit of the motor drive, it provides positive and negative current handling capabilities to achieve forward and reverse control of the motor.
- **Stepper Motor Drive**: In the stepper motor drive system, it supports precise current control and direction control.
3. **Automotive Application**:
- **Power Distribution**: Handles positive and negative voltage loads in the automotive power distribution system to ensure the reliability and efficiency of the power system.
- **Battery Management System (BMS)**: Battery management applications that handle bipolar voltages in electric and hybrid vehicles to improve system performance and safety.
4. **Consumer Electronics**:
- **Power Management Module**: Power management modules in various consumer electronics products provide efficient and reliable switching and current control.
- **Battery-Powered Devices**: In portable devices using positive and negative voltages, dual MOSFET configurations are provided to support complex power requirements.
With its dual MOSFET configuration and low on-resistance, the VBBD5222 is suitable for a variety of application scenarios that require positive and negative voltage operation and efficient switching, ensuring the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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