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VBED1806 Product details

Product introduction:

Product Introduction

**VBED1806** is a unipolar N-channel MOSFET using Trench technology in SOT669 package. This MOSFET is designed for high power and high efficiency switching applications with low on-resistance and high current carrying capacity. It provides high performance in a small package and is suitable for electronic devices that require compact design and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT669 Single-N 80V 20V(±V) 1.4V 90A 7.2(mΩ) 6(mΩ) Trench
Detailed parameter description

- **Package**: SOT669
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(on))**:
- 7.2mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 90A
- **Technology**: Trench technology

Domain and module applications:

Application fields and module examples

The high performance characteristics of **VBED1806** make it very suitable for the following high-power and high-efficiency applications:

1. **Power management**: Due to its low on-resistance and high current capability, this MOSFET is very suitable for high-efficiency power management systems such as DC-DC converters and power modules. In these applications, it can handle high-current switching operations, improve power conversion efficiency, and reduce energy losses.

2. **Electric vehicles**: In the power electronics systems of electric vehicles, such as battery management systems (BMS) and motor drive systems, this MOSFET can handle high-current switching to ensure the efficiency and stability of the system. Its small package also makes it suitable for electric vehicle electronic systems with limited space.

3. **Inverter system**: In high-power inverter systems, such as solar photovoltaic inverters and industrial inverters, this MOSFET can effectively handle high voltage and high current switching operations, provide efficient power conversion, and ensure reliable operation of the system.

4. **Consumer electronics**: In power management modules of consumer electronics such as smartphones, tablets and laptops, the compact package and high efficiency of this MOSFET make it suitable for high-power power switching and protection circuits, helping to improve product stability and energy efficiency.

5. **High-power switching**: In switching applications that need to handle high current and high power, such as power switching equipment and power electronic systems, this MOSFET can provide reliable switching performance and efficient current control.

In summary, VBED1806 is a MOSFET with high current carrying capacity and low on-resistance, suitable for various high-power power management and switching applications, especially in electronic devices with limited space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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