1. VBBD4290 Product Introduction
VBBD4290 is a high-performance single P-channel MOSFET in a DFN8(3x2)-B package. This MOSFET is designed for efficient switching applications and has a drain-source voltage (VDS) of -20V and a gate-source voltage (VGS) of ±8V. VBBD4290 uses advanced Trench technology with a threshold voltage (Vth) of -0.8V. At a gate-source voltage of 4.5V, its on-resistance is 100mΩ, while at a gate-source voltage of 10V, the on-resistance is reduced to 83mΩ. This MOSFET supports a continuous drain current (ID) of up to -4A, and is particularly suitable for applications that require efficient switching and low conduction losses.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X2)-B | Single | -20V | 8V（±V） | -0.8V | -4A | 100(mΩ) | 83(mΩ) | Trench |
II. VBBD4290 Detailed Parameters
| Parameter | Value | Unit |
|------------------------|--------------------------|--------|
| Product Model | VBBD4290 | |
| Package | DFN8(3x2)-B | |
| Configuration | Single P-channel | |
| Drain-Source Voltage (VDS) | -20 | V |
| Gate-Source Voltage (VGS) | ±8 | V |
| Threshold Voltage (Vth) | -0.8 | V |
| On-Resistance (RDS(ON)) | 100 (VGS = 4.5V) | mΩ |
| | 83 (VGS = 10V) | mΩ |
| Continuous Drain Current (ID) | -4 | A |
| Instantaneous Pulse Drain Current (ID(pulse)) | -16 | A |
| Maximum power consumption (Ptot) | 2.5 | W |
| Operating temperature range | -55 to +150 | °C |
| Storage temperature range | -55 to +150 | °C |
| Technology | Trench | |
3. Application fields and module examples
The design of VBBD4290 makes it excel in multiple fields and applications, especially in applications that require efficient switching and low on-resistance. Here are a few specific application examples:
1. **Power management**: In low-voltage switching power supplies and DC-DC converters, VBBD4290 can be used as an efficient switching element. Its low on-resistance and moderate current handling capability make it very suitable for improving power conversion efficiency and reducing power losses.
2. **Portable devices**: Due to its compact DFN8(3x2)-B package, VBBD4290 is ideal for switching applications in portable electronic devices. For example, power management modules in smartphones, tablets, and portable chargers can take advantage of the high efficiency and small size of this MOSFET.
3. **Low-power motor drive**: In some low-power motor drive systems, VBBD4290 can provide stable switching performance, suitable for motor control of small power tools and household appliances, ensuring smooth operation and high efficiency of the motor.
4. **Battery management system**: In the battery management system (BMS), VBBD4290 can provide switching and protection functions for the battery. Its low on-resistance and high switching efficiency help improve the overall performance and life of the battery system, especially in battery management of mobile devices and electric vehicles.
These application examples demonstrate the key role of VBBD4290 in scenarios that require efficient switching and low conduction losses, especially in portable electronic devices and low-power motor drive systems.
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