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VBM2157N Product details

Product introduction:

VBM2157N Product Introduction

**VBM2157N** is a single P-channel power MOSFET in TO220 package, manufactured using Trench technology. This MOSFET has high voltage resistance and low on-resistance, and is designed for high-efficiency power management and high-current switching applications. Its characteristics enable it to provide stable and reliable performance under high load conditions, and is suitable for a variety of application scenarios that require high efficiency and high reliability.


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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-P -150V 20V(±V) -2V -40A 80(mΩ) 65(mΩ) Trench
Detailed parameter description

- **Package:** TO220
- **Configuration:** Single P-channel
- **Maximum drain-source voltage (VDS):** -150V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -2V
- **On-resistance (RDS(on)):**
- 80mΩ @ VGS = 4.5V
- 65mΩ @ VGS = 10V
- **Maximum continuous drain current (ID):** -40A
- **Technology:** Trench


Domain and module applications:

Application fields and module examples

The characteristics of the **VBM2157N** make it suitable for the following fields and modules:

1. **Power management:**
Due to its high withstand voltage capability and low on-resistance, this MOSFET is very suitable for use in high-efficiency power conversion modules such as DC-DC converters and power supplies. In these applications, the VBM2157N can efficiently handle high voltage inputs and provide a stable output voltage, thereby improving the overall efficiency of the system.

2. **Electric vehicles:**
In the power system of electric vehicles, such as the battery management system (BMS), this MOSFET can be used to control the charging and discharging process of the battery. Its high current handling capability and low power consumption characteristics ensure efficient and safe battery management, improving the performance and service life of the battery.

3. **High-power switching power supply:**
VBM2157N performs well in high-power switching power supply applications such as inverters and power amplifiers. Its high current capability and low on-resistance ensure efficient switching performance, suitable for high-load and high-frequency switching applications.

4. **Industrial Automation:**
In industrial automation systems, such as motor drive and load control, this MOSFET provides stable current switching capability. Its low on-resistance and high current carrying capacity make it suitable for high-load and high-efficiency industrial applications.

5. **Consumer Electronics:**
In power management modules of consumer electronics products such as laptops and TVs, VBM2157N can optimize power supply and improve product stability and energy efficiency. Its excellent switching performance and low energy consumption characteristics are crucial to improving the performance and service life of the overall equipment.

In summary, VBM2157N is a high-voltage, high-current, high-efficiency MOSFET suitable for various high-power power management and switching applications, and is widely used in power management, electric vehicles, high-power switching power supplies, industrial automation and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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