SMG2310-VB is a VBsemi brand N-Channel trench field effect transistor with SOT23 package. The following are detailed parameters and application introduction:

**Detailed parameter description: **
- **Model: ** SMG2310-VB
- **Silkscreen: ** VB1695
- **Brand: ** VBsemi
- **Package: ** SOT23
- **Channel type: ** N-Channel
- **Maximum withstand voltage: ** 60V
- **Maximum current: ** 4A
- **On-resistance (RDS(ON)): ** 85mΩ @ VGS=10V, VGS=20V
- **Threshold voltage (Vth): ** 1~3V

**Application introduction: **
SMG2310-VB is suitable for circuits that need to control current, especially under low voltage and medium current conditions. Its main application areas and modules include but are not limited to:

1. **Power management module:** Since SMG2310-VB has a low on-resistance under low voltage conditions, it can be used for current control and switching functions in power management modules.

2. **Drive and amplifier circuit:** Suitable for drive and amplifier circuits that require N-Channel MOSFET, such as audio amplifiers, power amplifiers, etc.

3. **LED driver:** In the field of LED lighting, it can be used to design LED drivers to achieve efficient control of LED lights.

4. **Battery protection module:** In applications that require precise control of battery charging and discharging, it can be used as a key component of the battery protection module.

5. **Low voltage electronic devices:** Suitable for portable electronic devices and other low voltage circuits to achieve efficient power management and current control.

The above are some possible application scenarios, and the specific selection should be based on project requirements and circuit design requirements.