中文
English
VBQG7322 Product details
Back to previous pageProduct introduction：
This product is a unipolar N-channel FET with a rated drain-source voltage of 30V and a maximum drain current of 6A. At VGS=4.5V, the drain-source on-resistance is 27mΩ , 23mΩ at VGS=10V. Its threshold voltage is 1.7V and is manufactured using trench technology. The package is DFN6 (2X2).
VBQG7322 is suitable for applications requiring small size and low power, providing reliable power control and stability in a compact space. Its small package and low power characteristics make it suitable for electronic devices and systems requiring high performance and reliability.
VBQG7322 is suitable for applications requiring small size and low power, providing reliable power control and stability in a compact space. Its small package and low power characteristics make it suitable for electronic devices and systems requiring high performance and reliability.
File download
Download PDF document
Download now
.png)
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN6(2X2) | Single-N | 30V | 20（±V） | 1.7V | 6A | 27 (mΩ) | 23 (mΩ) | Trench |
Product model: VBQG7322
Brand: VBsemi
parameter:
- Unipolar N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source on-resistance (m次) at VGS=4.5V: 27
- Drain-source on-resistance (m次) at VGS=10V: 23
- Maximum drain current (ID): 6A
- Technology: Trench (groove type)
Package: DFN6(2X2)
Brand: VBsemi
parameter:
- Unipolar N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source on-resistance (m次) at VGS=4.5V: 27
- Drain-source on-resistance (m次) at VGS=10V: 23
- Maximum drain current (ID): 6A
- Technology: Trench (groove type)
Package: DFN6(2X2)
Domain and module applications：
for example:
1. **Mobile devices**: VBQG7322 can be used as a switch tube for the power management module in mobile devices to control the output and charging of battery power. Due to its small size and low power characteristics, it is suitable for the compact space and low power consumption requirements of mobile devices.
2. **Smart Home**: In smart home systems, VBQG7322 can be used as a switch tube for smart sockets and switch control modules to control the switches and power management of home appliances. Its small package and low power consumption improve the performance and stability of smart home systems.
3. **Sensor interface**: VBQG7322 can be used as a switch tube in the sensor interface circuit to control the data collection and signal transmission of the sensor. Due to its low power characteristics, it is suitable for sensor interface applications requiring long operation and low power consumption.
In summary, the VBQG7322 field effect transistor is suitable for small size and low power applications, such as applications in mobile devices, smart homes, and sensor interfaces.
1. **Mobile devices**: VBQG7322 can be used as a switch tube for the power management module in mobile devices to control the output and charging of battery power. Due to its small size and low power characteristics, it is suitable for the compact space and low power consumption requirements of mobile devices.
2. **Smart Home**: In smart home systems, VBQG7322 can be used as a switch tube for smart sockets and switch control modules to control the switches and power management of home appliances. Its small package and low power consumption improve the performance and stability of smart home systems.
3. **Sensor interface**: VBQG7322 can be used as a switch tube in the sensor interface circuit to control the data collection and signal transmission of the sensor. Due to its low power characteristics, it is suitable for sensor interface applications requiring long operation and low power consumption.
In summary, the VBQG7322 field effect transistor is suitable for small size and low power applications, such as applications in mobile devices, smart homes, and sensor interfaces.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
