Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
20（±V） |
1.6/-1.7V |
±7A |
|
24/40(mΩ) |
18/32(mΩ) |
Trench |
Detailed parameter description:
- Product model: VBQG5325
- Brand: VBsemi
- Type: Dual N+P channel field effect transistor
- Rated voltage: VDS=㊣30V, VGS=㊣20V
- Threshold voltage: Vth=1.6V (N-channel) / -1.7V (P-channel)
- Drain-source on-resistance (when VGS=4.5V): 24m次 (N channel) / 40m次 (P channel)
- Drain-source on-resistance (when VGS=10V): 18m次 (N channel) / 32m次 (P channel)
- Maximum drain current: ㊣7A
- Technology: Trench
- Package: DFN6(2X2)-B
Domain and module applications：
Examples of applicable fields and modules:
- Power management module: can be used for low-voltage power management and power switch control, suitable for mobile devices and consumer electronics.
- Automotive electronic modules: Suitable for driver and controller modules in automotive electronic systems, such as engine control units and power systems of electric vehicles.
- Industrial automation modules: Power switches and drive modules that can be used in industrial automation equipment and control systems, such as PLC controllers and factory automation equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page-B.png)
