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VBQG5325 Product details
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Product introduction:
VBsemi's VBQG5325 model is a dual N+P channel field effect transistor (Dual N+P) with the following main parameters:
- Rated drain-source voltage (VDS): ±30V
- Rated gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): 1.6V (N-channel) / -1.7V (P-channel)
- Drain-source on-resistance (mΩ) at VGS=4.5V: 24 (N channel) / 40 (P channel)
- Drain-source on-resistance (mΩ) at VGS=10V: 18 (N channel) / 32 (P channel)
- Maximum drain current (ID): ±7A
- Technology: Trench
- Package: DFN6(2X2)-B
VBsemi's VBQG5325 model is a dual N+P channel field effect transistor (Dual N+P) with the following main parameters:
- Rated drain-source voltage (VDS): ±30V
- Rated gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): 1.6V (N-channel) / -1.7V (P-channel)
- Drain-source on-resistance (mΩ) at VGS=4.5V: 24 (N channel) / 40 (P channel)
- Drain-source on-resistance (mΩ) at VGS=10V: 18 (N channel) / 32 (P channel)
- Maximum drain current (ID): ±7A
- Technology: Trench
- Package: DFN6(2X2)-B
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN6(2X2)-B | Dual-N+P | ±30V | 20（±V） | 1.6/-1.7V | ±7A | 24/40(mΩ) | 18/32(mΩ) | Trench |
Detailed parameter description:
- Product model: VBQG5325
- Brand: VBsemi
- Type: Dual N+P channel field effect transistor
- Rated voltage: VDS=㊣30V, VGS=㊣20V
- Threshold voltage: Vth=1.6V (N-channel) / -1.7V (P-channel)
- Drain-source on-resistance (when VGS=4.5V): 24m次 (N channel) / 40m次 (P channel)
- Drain-source on-resistance (when VGS=10V): 18m次 (N channel) / 32m次 (P channel)
- Maximum drain current: ㊣7A
- Technology: Trench
- Package: DFN6(2X2)-B
- Product model: VBQG5325
- Brand: VBsemi
- Type: Dual N+P channel field effect transistor
- Rated voltage: VDS=㊣30V, VGS=㊣20V
- Threshold voltage: Vth=1.6V (N-channel) / -1.7V (P-channel)
- Drain-source on-resistance (when VGS=4.5V): 24m次 (N channel) / 40m次 (P channel)
- Drain-source on-resistance (when VGS=10V): 18m次 (N channel) / 32m次 (P channel)
- Maximum drain current: ㊣7A
- Technology: Trench
- Package: DFN6(2X2)-B
Domain and module applications：
Examples of applicable fields and modules:
- Power management module: can be used for low-voltage power management and power switch control, suitable for mobile devices and consumer electronics.
- Automotive electronic modules: Suitable for driver and controller modules in automotive electronic systems, such as engine control units and power systems of electric vehicles.
- Industrial automation modules: Power switches and drive modules that can be used in industrial automation equipment and control systems, such as PLC controllers and factory automation equipment.
- Power management module: can be used for low-voltage power management and power switch control, suitable for mobile devices and consumer electronics.
- Automotive electronic modules: Suitable for driver and controller modules in automotive electronic systems, such as engine control units and power systems of electric vehicles.
- Industrial automation modules: Power switches and drive modules that can be used in industrial automation equipment and control systems, such as PLC controllers and factory automation equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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