Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3)-C |
Half-Bridge-N+N |
30V |
20（±V） |
1.7V |
28A |
|
22/45(mΩ) |
16/40(mΩ) |
Trench |
Product model: VBQF3316G
Brand: VBsemi
parameter:
- Type: Half-bridge N+N type
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (m次) at VGS=4.5V: 22/45
- Drain-source resistance (m次) at VGS=10V: 16/40
- Drain current (ID): 28A
- Technology: Trench
Package: DFN8(3X3)-C
Domain and module applications：
This VBQF3316G product is suitable for the following fields and modules:
1. Motor drive: Due to its half-bridge structure and high drain current, it can be used to design motor drive modules, such as electric vehicle drivers, electric bicycle controllers and industrial motor drivers.
2. Inverter: Suitable for designing half-bridge inverter modules, such as solar inverters and AC power electronic inverters, to convert DC power to AC power or adjust the frequency and voltage of AC power.
3. Power module: Can be used to design half-bridge power modules, such as direct current-to-direct current (DC-DC) converters and alternating current-to-direct current (AC-DC) converters, to achieve high efficiency and stable power conversion.
4. Automotive electronics: Suitable for automotive electronics fields, such as vehicle chargers, electric vehicle battery management systems and vehicle power systems to provide reliable power control and regulation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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