VBQF3316G Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 20(±V) | 1.7V | 28A | 22/45(mΩ) | 16/40(mΩ) | Trench |
Brand: VBsemi
parameter:
- Type: Half-bridge N+N type
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (m次) at VGS=4.5V: 22/45
- Drain-source resistance (m次) at VGS=10V: 16/40
- Drain current (ID): 28A
- Technology: Trench
Package: DFN8(3X3)-C
Domain and module applications:
1. Motor drive: Due to its half-bridge structure and high drain current, it can be used to design motor drive modules, such as electric vehicle drivers, electric bicycle controllers and industrial motor drivers.
2. Inverter: Suitable for designing half-bridge inverter modules, such as solar inverters and AC power electronic inverters, to convert DC power to AC power or adjust the frequency and voltage of AC power.
3. Power module: Can be used to design half-bridge power modules, such as direct current-to-direct current (DC-DC) converters and alternating current-to-direct current (AC-DC) converters, to achieve high efficiency and stable power conversion.
4. Automotive electronics: Suitable for automotive electronics fields, such as vehicle chargers, electric vehicle battery management systems and vehicle power systems to provide reliable power control and regulation.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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