Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-P |
-60V |
20（±V） |
-1.7V |
36A |
|
29 (mΩ) |
21 (mΩ) |
Trench |
has the following parameters:
The maximum drain-source voltage (VDS) is -60V, the maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -1.7V. When the gate-source voltage is 4.5V, the drain-source resistance is 29m次; when the gate-source voltage is 10V, the drain-source resistance is 21m次. Its maximum drain current (ID) is 36A, using trench technology (Trench).
This product is packaged in DFN8 (3X3).
Domain and module applications：
VBQF2625 transistor is suitable for a variety of fields and modules. For example,
In power management modules, it can be used in battery management systems, DC-DC converters and power switches.
Due to its high drain-source current and low drain-source resistance, this transistor is particularly suitable for use in high-efficiency and high-performance power control applications. In automotive electronic modules, it can be used in electric vehicle motor control, light driving and battery management systems. Additionally, in industrial control modules it can be used for power switching, motor control and sensor interfaces.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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