Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
100V |
20（±V） |
1.8V |
35.5A |
|
|
17 (mΩ) |
Trench |
Product model: VBQF1102N
Brand: VBsemi
parameter:
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 100V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source resistance (m次) at VGS=10V: 17
- Maximum drain current (ID): 35.5A
- Technology: Channel
Package: DFN8(3X3)
Domain and module applications：
Example 1: Applicable to power management module
Since this transistor has a high drain-source voltage and drain current capacity, it is suitable for use in switching power supply circuits or voltage stabilizing circuits in power management modules. In these modules, it can provide reliable switching control and stable voltage output to meet the power needs of various electronic devices.
Example 2: Suitable for electric vehicle driver module
For electric vehicle drive modules, efficient power switching devices are needed to control the speed and steering of the electric motor. The VBQF1102N has low drain-source resistance and high drain current capacity, making it suitable for use as a power switching device in electric vehicle driver modules. It provides efficient power conversion and is stable under high voltage and high current conditions, ensuring the reliability and performance of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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