Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8X8 |
Single-N |
650V |
30（±V） |
3.5V |
20A |
|
|
150(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Product model: VBQE165R20SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
-Package: DFN8X8
- VDS (withstand voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 150m次
- Maximum drain current (ID): 20A
- Technology: SJ_Deep-Trench
Domain and module applications：
Examples of application areas and modules:
1. Renewable energy systems: VBQE165R20SE can be used as power switch modules in solar inverters and wind power generation systems to improve energy conversion efficiency.
2. Industrial motor drive: Suitable for power modules in industrial motor drives to achieve efficient and stable operation of factory production equipment.
3. Electric vehicle charging piles: In electric vehicle charging piles, this product can be used as a key component of the charge controller to achieve fast charging and safe and stable power supply.
4. Medical equipment power supply: used in power modules in medical equipment to ensure the reliable operation of medical equipment and provide safe power support.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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