Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X2)-B |
Dual-N+P |
±20V |
20（±V） |
1.0/-1.2V |
5.9/-4A |
|
22/45(mΩ) |
18/40(mΩ) |
Trench |
Detailed parameter description:
- Product model: VBQD5222U
- Brand: VBsemi
- Type: Dual N+P type MOSFET
- Maximum drain-source voltage (VDS): ㊣20V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.0V/-1.2V
- Drain-source resistance (m次) at VGS=4.5V: 22/45
- Drain-source resistance (m次) at VGS=10V: 18/40
- Maximum drain current (ID): 5.9A/-4A
- Technology: Trench
- Package: DFN8(3X2)-B
Domain and module applications：
Application examples:
The product is suitable for a variety of fields and modules, such as:
1. Power management: Can be used in various power management modules, such as power switches, voltage regulators, etc.
2. Power tools: Suitable for motor control and power switch modules in power tools to improve tool performance and efficiency.
3. Automotive electronics: It can be used in power control, drive control and other modules in automotive electronic systems to improve the performance and safety of the car.
4. Industrial automation: Suitable for power control, drive control and other modules in industrial automation systems to improve production efficiency and stability.
The above are some examples of applications of this product in different fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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