Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO3P |
Single-N |
900V |
30（±V） |
3.5V |
47A |
|
|
100 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Model: VBPB19R47S
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 900V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(on)) when gate-source voltage is 10V: 100 m次
- Rated current (ID): 47A
- Technology: SJ_Multi-EPI
-Package:TO3P
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: Because VBPB19R47S has higher rated voltage and rated current, it can be used in switching power supplies and inverters in industrial power modules.
2. Electric vehicle charger: Because this device has high voltage tolerance and low on-resistance, it is suitable for use in DC-DC converters and charging control modules in electric vehicle chargers.
3. Solar inverter: VBPB19R47S can be used as a power switching device in a solar inverter to convert DC power generated by solar panels into AC power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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