VBPB19R47S Product details
Product introduction:
VBsemi's VBPB19R47S is a single N-type power field effect transistor (MOSFET) using SJ_Multi-EPI technology. This product features high voltage tolerance and low on-resistance, making it suitable for a variety of power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 30(±V) | 3.5V | 47A | 100 (mΩ) | SJ_Multi-EPI |
- Brand: VBsemi
- Model: VBPB19R47S
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 900V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(on)) when gate-source voltage is 10V: 100 m次
- Rated current (ID): 47A
- Technology: SJ_Multi-EPI
-Package:TO3P
Domain and module applications:
Examples of applicable fields and modules:
1. Industrial power module: Because VBPB19R47S has higher rated voltage and rated current, it can be used in switching power supplies and inverters in industrial power modules.
2. Electric vehicle charger: Because this device has high voltage tolerance and low on-resistance, it is suitable for use in DC-DC converters and charging control modules in electric vehicle chargers.
3. Solar inverter: VBPB19R47S can be used as a power switching device in a solar inverter to convert DC power generated by solar panels into AC power.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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