Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO3P |
Single-N |
900V |
30（±V） |
3.5V |
15A |
|
|
420 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBPB19R15S
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 900V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- At VGS=10V, drain-source resistance (m次): 420
- Maximum drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package:TO3P
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial high-power power module: VBPB19R15S is suitable for industrial high-power power modules, such as welding equipment, large motor drivers, etc., providing stable and reliable high-power output.
2. High-voltage direct current transmission system: Power switch module used in high-voltage direct current transmission system to achieve efficient transmission and conversion of electric energy.
3. Automobile electrification system: In the field of automobile electrification, this device can be used in motor controllers, battery management systems, etc. of electric vehicles to provide efficient power control and management.
4. Solar inverter: In solar inverter, VBPB19R15S can be used to convert the DC power output by the solar panel into AC power for household and industrial electricity.
5. High-power LED lighting system: In high-power LED lighting systems, this device can be used as a power switching element to control the brightness and stability of LED lights.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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