Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO3P |
Single-N |
900V |
30（±V） |
3.5V |
9A |
|
|
750 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Transistor type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Low on-state resistance (VGS=10V): 750m次
- Maximum continuous drain current (ID): 9A
- Technology: Using SJ_Multi-EPI technology
Domain and module applications：
Applications:
This product is suitable for the following areas and modules:
1. High-frequency power module: Due to its high drain-source voltage and moderate continuous drain current, it is suitable for high-frequency power modules, such as RF power amplifiers and RF switching power supplies.
2. Automotive electronics: Can be used in automotive electronic modules, such as vehicle power management systems and vehicle motor drivers, to provide reliable power output.
3. Industrial control system: Suitable for industrial control system modules, such as industrial power supply and industrial motor driver, to ensure stable operation of the system.
4. Power tools: Can be used in power tool drive modules to provide reliable power output and drive the motors of power tools.
The above examples illustrate the wide application of VBPB19R09S products in the fields of high-frequency power supply, automotive electronics, industrial control and power tools.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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