VBPB18R47S Product details
Product introduction:
VBsemi's VBPB18R47S model is a single-channel N-channel power MOSFET with a drain-source voltage (VDS) of 800V, a drain current (ID) of 47A, and a threshold voltage (Vth) of 3.5V. It adopts SJ_Multi-EPI technology and is packaged as TO3P. This MOSFET is suitable for high voltage applications and has low on-resistance and high drain current capability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 30(±V) | 3.5V | 47A | 90 (mΩ) | SJ_Multi-EPI |
- Product model: VBPB18R47S
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 800V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 90
- Maximum drain current (ID): 47A
- Technology: SJ_Multi-EPI
-Package:TO3P
Domain and module applications:
1. Industrial power module: Due to its high voltage and high current characteristics, VBPB18R47S can be used in industrial power modules to provide stable power output.
2. Electric vehicle charging piles: In electric vehicle charging piles, which need to withstand higher voltages and currents, VBPB18R47S can be used as a switching element to control and regulate the charging process.
3. Solar inverter: In a solar inverter, high-efficiency power switching devices are required to achieve conversion and output of solar energy. The high voltage and high current characteristics of the VBPB18R47S make it a suitable choice.
Technical support:
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