Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO3P |
Single-N |
800V |
30（±V） |
3.5V |
47A |
|
|
90 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBPB18R47S
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 800V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 90
- Maximum drain current (ID): 47A
- Technology: SJ_Multi-EPI
-Package:TO3P
Domain and module applications：
Examples of application areas:
1. Industrial power module: Due to its high voltage and high current characteristics, VBPB18R47S can be used in industrial power modules to provide stable power output.
2. Electric vehicle charging piles: In electric vehicle charging piles, which need to withstand higher voltages and currents, VBPB18R47S can be used as a switching element to control and regulate the charging process.
3. Solar inverter: In a solar inverter, high-efficiency power switching devices are required to achieve conversion and output of solar energy. The high voltage and high current characteristics of the VBPB18R47S make it a suitable choice.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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