Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO3P |
Single-N |
800V |
30（±V） |
3.5V |
20A |
|
|
240 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBPB18R20S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
-Package:TO3P
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 240
- Maximum drain current (ID): 20A
- Technology: SJ_Multi-EPI
Domain and module applications：
Examples of application areas:
1. Industrial power module: VBPB18R20S has a drain-source voltage of 800V and a maximum drain current of 20A. It is suitable for the design and manufacturing of industrial power modules and can provide high-power power output stably and reliably.
2. High-voltage DC transmission system: This product is suitable for high-voltage DC transmission systems and can stably and reliably control the current and voltage of the transmission system to ensure the safe transmission and effective utilization of electric energy.
3. Industrial welding equipment: VBPB18R20S can be used in industrial welding equipment to help achieve high-power arc welding and ensure welding quality and efficiency.
4. High-voltage power equipment: Due to its high voltage resistance and large current characteristics, this product is suitable for various high-voltage power equipment, such as high-voltage circuit breakers, insulators, etc., to ensure the normal operation and safety of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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