VBPB18R15S Product details
Product introduction:
VBsemi's VBPB18R15S is a single N-channel field effect transistor (MOSFET) designed for high performance and reliability. Using SJ_Multi-EPI technology and packaged as TO3P, it is suitable for various application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 30(±V) | 3.5V | 15A | 380 (mΩ) | SJ_Multi-EPI |
- Product model: VBPB18R15S
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 380
- Maximum drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package:TO3P
Domain and module applications:
1. High-performance power modules: The high drain-source voltage and drain current of the VBPB18R15S make it suitable for designing high-performance power modules, such as those used in data centers and communication base stations.
2. Industrial automation control systems: Due to its high voltage and high current characteristics, it can be used in power switch modules in industrial automation control systems, such as for motor control and robotic systems.
3. Medical equipment: In the medical field, this device can be used to design high-performance power amplifiers and control circuits in medical equipment, such as medical imaging equipment and surgical instruments.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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