Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO3P |
Single-N |
800V |
30（±V） |
3.5V |
15A |
|
|
380 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBPB18R15S
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 380
- Maximum drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package:TO3P
Domain and module applications：
Examples of applicable areas and modules:
1. High-performance power modules: The high drain-source voltage and drain current of the VBPB18R15S make it suitable for designing high-performance power modules, such as those used in data centers and communication base stations.
2. Industrial automation control systems: Due to its high voltage and high current characteristics, it can be used in power switch modules in industrial automation control systems, such as for motor control and robotic systems.
3. Medical equipment: In the medical field, this device can be used to design high-performance power amplifiers and control circuits in medical equipment, such as medical imaging equipment and surgical instruments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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