Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO3P |
Single-N |
500V |
30（±V） |
3.5V |
18A |
|
|
210(mΩ) |
SJ_Multi-EPI |
parameter:
- Type: Single channel N-channel field effect transistor
- Rated drain-source voltage (VDS): 500V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source on-resistance at VGS=10V: 210m次
- Maximum drain current (ID): 18A
- Technology: SJ_Multi-EPI (Multiple Environmentally Friendly Heterojunction Technology)
-Package: TO3P
Domain and module applications：
for example:
1. Industrial power module: Since VBPB15R18S has high rated drain-source voltage and large drain current, it is suitable for high voltage DC converters or inverters in industrial power modules, such as industrial power systems and power grid regulators .
2. High-end electric vehicle motor drive module: As part of the high-end electric vehicle motor control system, VBPB15R18S can be used in a DC to AC inverter module to convert the DC power of the battery into the AC power required by the electric vehicle motor.
3. High-efficiency energy storage system: In renewable energy storage systems, VBPB15R18S can be used in solar or wind energy inverter modules to convert DC power generated by photovoltaic or wind power generation systems into AC power to supply to homes or commercial uses.
4. High-performance power module: Due to its stable characteristics and high efficiency, VBPB15R18S can be used in DC-DC converters or power switch modules in high-performance power modules to provide stable and reliable power output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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