Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-P |
-200V |
20（±V） |
-3.5V |
-55A |
|
55 (mΩ) |
50 (mΩ) |
Trench |
VBsemi's VBP2205N is a single-channel power MOSFET with the following characteristics:
The main parameters of the device are as follows:
- Maximum drain-source voltage (VDS) is -200V;
- The maximum gate-source voltage (VGS) is plus or minus 20V;
- Gate threshold voltage (Vth) is -3.5V;
- Drain-source resistance at VGS=4.5V is 55m次;
- Drain-source resistance at VGS=10V is 50m次;
- Maximum drain current (ID) is -55A;
- Made using trench technology (Trench).
The device is packaged in TO247.
Domain and module applications：
Industrial power module: VBP2205N can be used to design high-efficiency and high-stability industrial power modules, which can adapt to high voltage and high current requirements in industrial environments and provide reliable power output.
- Electric vehicle charging piles: This device can withstand high drain-source voltage and current and is suitable for power switch control in electric vehicle charging piles to achieve a fast and safe charging process.
- Electric drive module: In the field of electric drive, VBP2205N can be used as a power switching component in motor drives, frequency converters, inverters and other modules to achieve high-efficiency power conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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