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VBP2102M Product details

Product introduction:

VBP2102M is a VBsemi brand single-channel P-type metal oxide semiconductor field effect transistor (MOSFET).
The device is fabricated using trench technology. It is packaged in TO247.
The high performance and reliability of the VBP2102M enable it to play an important role in a variety of industrial and consumer electronics applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-P -100V 20(±V) -2V -21A 240 (mΩ) 200 (mΩ) Trench
Has the following main parameters:

- Rated drain-source voltage (VDS): -100V
- Gate-source voltage (VGS) range: ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (RDS(on)) when gate-source voltage is 4.5V: 240m次
- Drain-source resistance (RDS(on)) when gate-source voltage is 10V: 200m次
- Maximum drain current (ID): -21A

Domain and module applications:


The application of groove technology provides excellent performance in a variety of applications.
For example, in power modules, VBP2102M can be used in high-power DC-DC converters, electric vehicle charging piles and other fields.
Its high rated voltage and low on-resistance make it particularly suitable for applications that need to withstand high voltage and high power, such as inverter modules in industrial frequency converters, solar inverters, etc. In addition, its high threshold voltage and large drain current rating also make it an ideal choice for power switch modules, server power modules, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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