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VBP19R11S Product details
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Product introduction:
VBsemi's VBP19R11S model is a Single N-type power field effect transistor (MOSFET) packaged in TO247. The device is manufactured using SJ_Multi-EPI technology and offers excellent performance and reliability. Its key features include a rated drain-source voltage (VDS) of 900V, a maximum drain current (ID) of 11A, a turn-on voltage (Vth) of 3.5V, and an on-resistance of 580mΩ at VGS=10V.
VBsemi's VBP19R11S model is a Single N-type power field effect transistor (MOSFET) packaged in TO247. The device is manufactured using SJ_Multi-EPI technology and offers excellent performance and reliability. Its key features include a rated drain-source voltage (VDS) of 900V, a maximum drain current (ID) of 11A, a turn-on voltage (Vth) of 3.5V, and an on-resistance of 580mΩ at VGS=10V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 30（±V） | 3.5V | 11A | 580 (mΩ) | SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBP19R11S
- Brand: VBsemi
- Parameters:
- Type: Single N
- Rated drain-source voltage (VDS): 900V
- Rated gate-source voltage (VGS): ㊣30V
- Turn-on voltage (Vth): 3.5V
- On-resistance at VGS=10V: 580m次
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package: TO247
- Product model: VBP19R11S
- Brand: VBsemi
- Parameters:
- Type: Single N
- Rated drain-source voltage (VDS): 900V
- Rated gate-source voltage (VGS): ㊣30V
- Turn-on voltage (Vth): 3.5V
- On-resistance at VGS=10V: 580m次
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package: TO247
Domain and module applications：
Examples of application areas:
1. Industrial power system: VBP19R11S can be used in power switch modules in industrial power systems, such as industrial frequency converters, power converters, etc., to control current and voltage to achieve stable operation and regulation of the power system.
2. Power electronic converter: This device is also suitable for power switching circuits in power electronic converters, such as AC-DC converters, DC-AC converters, etc., for energy conversion and power regulation.
3. Solar inverter: VBP19R11S can be used as a key component in a solar inverter to convert DC power generated by solar photovoltaic panels into AC power to supply power to households or industrial power networks.
These areas and modules require the use of power MOSFETs to control current and voltage, and the performance characteristics of the VBP19R11S make it an ideal choice in these applications.
1. Industrial power system: VBP19R11S can be used in power switch modules in industrial power systems, such as industrial frequency converters, power converters, etc., to control current and voltage to achieve stable operation and regulation of the power system.
2. Power electronic converter: This device is also suitable for power switching circuits in power electronic converters, such as AC-DC converters, DC-AC converters, etc., for energy conversion and power regulation.
3. Solar inverter: VBP19R11S can be used as a key component in a solar inverter to convert DC power generated by solar photovoltaic panels into AC power to supply power to households or industrial power networks.
These areas and modules require the use of power MOSFETs to control current and voltage, and the performance characteristics of the VBP19R11S make it an ideal choice in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
