VBP195R09 Product details
Product introduction:
VBsemi's VBP195R09 is a single N-type field effect transistor with 950V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.3V threshold voltage (Vth), and 9A Drain current (ID). Manufactured using Plannar technology and packaged as TO247.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 950V | 30(±V) | 3.3V | 9A | 1700 (mΩ) | Plannar |
- Brand: VBsemi
- Product model: VBP195R09
- Type: Single N-type field effect transistor
- VDS (drain-source voltage): 950V
- VGS (gate-source voltage): 30V
- Vth (threshold voltage): 3.3V
- On-resistance at VGS=10V: 1700 m次
- Maximum drain current (ID): 9A
- Technology: Plannar
-Package:TO247
Domain and module applications:
Application examples:
1. Industrial power module: suitable for conversion and control of industrial power supply.
2. Wind energy conversion system: Power electronic modules for wind power equipment.
3. Electric vehicle charger: suitable for power converters in electric vehicle charging piles.
4. Grid stabilizer: Power conditioning module used in grid stabilization equipment.
5. Welding equipment: suitable for power switching devices in high-voltage welding machines.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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