Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
950V |
30（±V） |
3.3V |
9A |
|
|
1700 (mΩ) |
Plannar |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBP195R09
- Type: Single N-type field effect transistor
- VDS (drain-source voltage): 950V
- VGS (gate-source voltage): 30V
- Vth (threshold voltage): 3.3V
- On-resistance at VGS=10V: 1700 m次
- Maximum drain current (ID): 9A
- Technology: Plannar
-Package:TO247
Domain and module applications：
Application examples:
1. Industrial power module: suitable for conversion and control of industrial power supply.
2. Wind energy conversion system: Power electronic modules for wind power equipment.
3. Electric vehicle charger: suitable for power converters in electric vehicle charging piles.
4. Grid stabilizer: Power conditioning module used in grid stabilization equipment.
5. Welding equipment: suitable for power switching devices in high-voltage welding machines.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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