Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
800V |
30（±V） |
3.5V |
35A |
|
|
110(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBP18R35S
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- At VGS=10V, drain-source resistance (m次): 110
- Maximum drain current (ID): 35A
- Technology: SJ_Multi-EPI
-Package:TO247
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: The high voltage withstand capability and low on-resistance of VBP18R35S make it very suitable for use in industrial power modules, such as industrial motor drives, UPS systems, etc.
2. Solar inverter: In solar inverter, VBP18R35S can be used to achieve high-efficiency DC-AC conversion to provide power output from renewable energy.
3. Automotive electronic modules: Due to its high withstand voltage and high reliability, this device can be widely used in automotive electronic modules, such as electric vehicle battery management systems, electric power steering systems, etc.
4. LED lighting controller: VBP18R35S can be used as a power switching element in the LED lighting controller to achieve high efficiency and stability of the LED drive circuit.
5. Industrial automation equipment: In the field of industrial automation, this device can be used in modules such as motor control, power supply, and power regulation to improve the performance and reliability of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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