Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
800V |
30（±V） |
3.5V |
25A |
|
|
140(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBP18R25SFD
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 140
- Maximum drain current (ID): 25A
- Technology: SJ_Multi-EPI
-Package:TO247
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power modules: Due to its high drain-source voltage and large drain current, VBP18R25SFD is suitable for industrial power modules such as inverters, DC power supplies and UPS.
2. Automotive electronic systems: In automotive electronic systems, VBP18R25SFD can be used to drive electric vehicle motors, control generators and other high-power electronic modules.
3. Solar inverter: As a power switch in a solar inverter, VBP18R25SFD can achieve efficient conversion and output of solar energy.
4. Welding equipment: In welding equipment, this MOSFET can be used to control the welding current and improve the stability and efficiency of the equipment.
5. Consumer electronics: Due to its high performance and reliability, VBP18R25SFD can also be used in power management and power control modules in consumer electronics, such as TVs, audio, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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