Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
800V |
30（±V） |
3.5V |
25A |
|
|
138(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Transistor type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Low on-state resistance (VGS=10V): 138m次
- Maximum continuous drain current (ID): 25A
- Technology: Using SJ_Multi-EPI technology
Domain and module applications：
Applications:
This product is suitable for the following areas and modules:
1. Industrial power module: Due to its high drain-source voltage and large current characteristics, it can be used in industrial power modules, such as DC regulated power supplies and frequency converters.
2. Electric vehicle charger: With high drain-source voltage and continuous drain current, it is suitable for electric vehicle charger modules and provides efficient and stable charging performance.
3. Solar inverter: Suitable for solar inverter modules to realize DC to AC conversion of solar photovoltaic panels and provide reliable power output.
4. High-voltage switching power supply: Due to its high drain-source voltage and low on-state resistance, it can be used in high-voltage switching power supply modules to achieve efficient and stable switching control.
These examples illustrate the wide range of applications of VBP18R25S products in industry, transportation, energy and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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