Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
800V |
30（±V） |
3.5V |
20A |
|
|
220(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBP18R20S
- Brand: VBsemi
- Type: Single N-channel Field Effect Transistor (MOSFET)
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 220
- Maximum drain current (ID): 20A
- Technology: SJ_Multi-EPI
-Package:TO247
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: The high drain-source voltage and drain current of VBP18R20S make it suitable for designing industrial power modules to provide stable and reliable power supply for factory equipment.
2. Electric vehicle charging piles: Due to its high performance and reliability, it can be used as a power switch module in electric vehicle charging piles to achieve fast charging and high-efficiency conversion.
3. Solar inverter: In the field of renewable energy, this device can be used as a power switch module in a solar inverter to convert solar energy into usable AC power and promote the development of clean energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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