VBP18R20S Product details
Product introduction:
VBsemi's VBP18R20S is a single N-channel field effect transistor (MOSFET) designed for high performance and reliability. Using SJ_Multi-EPI technology and packaged as TO247, it is suitable for various application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 30(±V) | 3.5V | 20A | 220(mΩ) | SJ_Multi-EPI |
- Product model: VBP18R20S
- Brand: VBsemi
- Type: Single N-channel Field Effect Transistor (MOSFET)
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 220
- Maximum drain current (ID): 20A
- Technology: SJ_Multi-EPI
-Package:TO247
Domain and module applications:
1. Industrial power module: The high drain-source voltage and drain current of VBP18R20S make it suitable for designing industrial power modules to provide stable and reliable power supply for factory equipment.
2. Electric vehicle charging piles: Due to its high performance and reliability, it can be used as a power switch module in electric vehicle charging piles to achieve fast charging and high-efficiency conversion.
3. Solar inverter: In the field of renewable energy, this device can be used as a power switch module in a solar inverter to convert solar energy into usable AC power and promote the development of clean energy.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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