VBP18R11S Product details
Product introduction:
VBsemi's VBP18R11S is a single N-channel field effect transistor (MOSFET) designed for high performance and reliability. Using SJ_Multi-EPI technology and packaged as TO247, it is suitable for various application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 30(±V) | 3.5V | 11A | 500 (mΩ) | SJ_Multi-EPI |
- Product model: VBP18R11S
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 500
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO247
Domain and module applications:
1. Industrial power module: The high drain-source voltage and drain current of VBP18R11S make it suitable for industrial power modules to provide stable and reliable power supply.
2. High-performance motor driver: Due to its high drain-source voltage and drain current, it can be used to design high-performance motor drivers, such as for electric vehicles and industrial machinery.
3. High-voltage direct current transmission system: In the power field, this device can be used to design switch modules in high-voltage direct current transmission systems to improve power transmission efficiency and stability.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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