Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
800V |
30（±V） |
3.5V |
11A |
|
|
500 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBP18R11S
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 500
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO247
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: The high drain-source voltage and drain current of VBP18R11S make it suitable for industrial power modules to provide stable and reliable power supply.
2. High-performance motor driver: Due to its high drain-source voltage and drain current, it can be used to design high-performance motor drivers, such as for electric vehicles and industrial machinery.
3. High-voltage direct current transmission system: In the power field, this device can be used to design switch modules in high-voltage direct current transmission systems to improve power transmission efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
