Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
850V |
30（±V） |
3.5V |
4A |
|
|
2700 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBP185R04
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 850V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 2700
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package:TO247
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: Due to its high drain-source voltage and large drain current, VBP185R04 is suitable for industrial power modules such as inverters, DC power supplies and UPS.
2. High-voltage DC transmission system: In the high-voltage DC transmission system, the MOSFET can be used in switching power supplies to achieve stable transmission and control of electric energy.
3. Medical equipment: In medical equipment, VBP185R04 can be used for power switch control of high-power modules such as X-ray machines and medical laser equipment.
4. Solar inverter: As a power switching element in a solar inverter, this product can achieve efficient conversion and output of solar energy.
5. Automotive electronic systems: In automotive electronic systems, the MOSFET can be used to drive motors, control generators and other high-power electronic modules to improve the performance and efficiency of the car.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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