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VBP17R47S Product details

Product introduction:

VBsemi's VBP17R47S is a single N-channel field effect transistor with a drain-source voltage of 700V, a gate-source voltage of 30V, and a threshold voltage of 3.5V. This product uses SJ_Multi-EPI technology and is packaged as TO247.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 700V 30(±V) 3.5V 47A 80 (mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 80
- Maximum drain current (ID): 47A
- Technology: SJ_Multi-EPI

Domain and module applications:

This product is suitable for the following areas and modules:
- High-power power module: It can be used in industrial equipment, electric vehicle charging piles and other occasions that require high-power conversion to provide stable power output.
- Power electronic equipment: Suitable for large power electronic equipment, such as frequency converters and power transmission systems, to provide reliable power control and conversion.
- High-performance motor driver: It can be used in motor drive systems, such as high-speed trains, industrial machinery and other fields, to provide high efficiency and high power output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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