MOSFET

Your present location > Home page > MOSFET

VBP17R11S Product details

Product introduction:

VBsemi's VBP17R11S is a single N-channel field effect transistor with a drain-source voltage of 700V, a gate-source voltage of 30V, and a threshold voltage of 3.5V. This product uses SJ_Multi-EPI technology and is packaged as TO247.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 700V 30(±V) 3.5V 11A 450 (mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 450
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI

Domain and module applications:

This product is suitable for the following areas and modules:
- High-power power module: It can be used in industrial equipment, electric vehicle charging piles and other occasions that require high-power conversion to provide stable power output.
- High-efficiency solar inverter: suitable for inverter modules in solar power generation systems, capable of providing high-efficiency energy conversion.
- Industrial drives: Motor drives that can be used in industrial automation equipment, such as frequency converters and motor controllers, to provide reliable power conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

Online

Telephone

400-655-8788

WeChat

Topping

Sample Req
Online
Telephone
WeChat