Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
750V |
30（±V） |
3.5V |
2A |
|
|
6500 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBP175R02
- Brand: VBsemi
- Structure: Single N-channel field effect transistor
- VDS (drain-source voltage): 750V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On resistance (VGS=10V): 6500m次
- Drain current (ID): 2A
- Technology: Plannar
-Package:TO247
Domain and module applications：
Examples of applicable fields and modules:
1. Power inverter: Since VBP175R02 has a high drain voltage and moderate drain current, it is suitable for power inverter modules, used to convert DC power to AC power, used in solar power generation systems and electric vehicle chargers, etc. field.
2. High-voltage switch module: This product can be used as a high-voltage switch module for switching devices in power transmission and distribution systems to ensure the stable operation of the power system.
3. Power management module: VBP175R02 is suitable for power management modules, used to regulate and control the voltage and current in the power system to ensure the stable operation of electronic equipment.
4. LED lighting system: This product can be used as a power drive module in LED lighting systems to provide stable power output for LED lights and achieve efficient lighting effects.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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