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2SK1160-VB Product details

Product introduction:

### 1. 2SK1160-VB Product Introduction

2SK1160-VB is a single N-channel MOSFET in TO220 package. This model is manufactured using SJ_Multi-EPI technology, has a high drain-source voltage and moderate on-resistance, and is suitable for medium-power circuit design. Its maximum drain-source voltage (VDS) is 650V, the maximum gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 500mΩ when VGS=10V, and the maximum drain current (ID) is 9A.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N-Channel 650V 3.5V 9A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N-Channel SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N-Channel 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N-Channel 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N-Channel

### 2. 2SK1160-VB Detailed parameter description

- **Model**: 2SK1160-VB
- **Package**: TO220
- **Type**: Single N-channel
- **Technology**: SJ_Multi-EPI
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Turning on delay time**: < 10ns
- **Turning off delay time**: < 20ns
- **Total gate charge (Qg)**: 45nC
- **Gate-Drain Charge (Qgd)**: 12nC
- **Drain-Source Charge (Qgs)**: 33nC
- **Thermal Resistance (RθJC)**: < 2.0°C/W
- **Operating Temperature Range**: -55°C to 175°C

Domain and module applications:


### 3. Application fields and module examples

#### Power management module
2SK1160-VB is widely used in medium-power power management modules, especially in situations where high voltage and current need to be tolerated, such as switching power supplies and voltage regulators.

#### Electric vehicle charger
Due to its higher drain current and lower on-resistance, this model is suitable for power switch circuits in electric vehicle battery management systems to ensure high efficiency and safety of the system.

#### Industrial motor control
In the field of industrial motor control, 2SK1160-VB can be used in various medium-power motor drive and control systems, such as wind turbines, pump station control, etc.

#### Power inverter
In renewable energy systems such as solar and wind energy, this model can be used in inverter circuits to help achieve efficient conversion and management of energy.

#### High Performance Power Amplifier
In audio systems and professional audio equipment, 2SK1160-VB can be used in power amplifier circuits to provide high-fidelity audio amplification.

In summary, 2SK1160-VB has a wide range of application prospects in medium-power circuit design and is a high-performance MOSFET component suitable for a variety of electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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