Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P-Channel |
-30V |
|
-1.7V |
-5.8A |
|
56mΩ |
33mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P-Channel |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P-Channel |
-30V |
|
-1.7V |
-5.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P-Channel |
-30V |
|
-1.7V |
-5.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P-Channel |
|
|
|
|
|
|
|
### Detailed parameter description
- **Package:** SOP8
- **Configuration:** Single channel P type
- **Drain-source voltage (VDS):** -30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 56mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **Drain current (ID):** -5.8A
- **Technology:** Trench
Domain and module applications：
### Application Examples
**1. Power Management: **
2SJ469-VB MOSFET can be used in various low-power power management applications such as mobile electronic devices and home appliances. Its moderate conduction characteristics and low threshold voltage make it an ideal choice in power management circuits.
**2. DC-DC Converter: **
In power converters, this MOSFET can be used in the switch and control circuits of DC-DC converters to ensure conversion efficiency and stability.
**3. Battery Protection: **
In portable devices and power tools, 2SJ469-VB can be used in battery protection circuits to ensure that the battery is effectively managed and protected during the charging and discharging process.
**4. Automotive Electronics: **
In automotive electronic systems, this MOSFET can be used in vehicle electronic equipment and lighting control circuits to ensure the normal operation of automotive electronic systems.
These examples demonstrate the utility and suitability of the 2SJ469-VB MOSFET in various low power electronic applications, highlighting its importance in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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