VBP165R96SFD is a single N-type field effect transistor manufactured using SJ_Multi-EPI technology. It has high performance and voltage resistance characteristics and is suitable for high power and high frequency power electronic applications.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 30（±V） | 3.5V | 96A | 19(mΩ) | SJ_Multi-EPI |
parameter:
- Single N-type field effect transistor
- Rated drain-source voltage VDS(V): 650
- Gate-source voltage VGS(㊣V): 30
- Threshold voltage Vth(V): 3.5
- On-resistance (m次) when gate-source voltage is 10V: 19
- Maximum drain current ID (A): 96
- Technology: SJ_Multi-EPI
Package: TO247
for example:
1. High-frequency power module: Due to its low on-resistance and high-frequency characteristics, VBP165R96SFD is suitable for high-power, high-frequency power modules and can be used to design high-efficiency switching power supplies, inverters and wireless charging equipment.
2. Power transmission system: In power transmission and distribution systems, VBP165R96SFD can be used to design high-power switching equipment, such as smart grids, substations and power distribution cabinets, to achieve safe power transmission and distribution.
3. Industrial driver: VBP165R96SFD can be used as a power switching device for various industrial drivers, such as motor drivers, variable frequency air conditioning systems and industrial robots, to help achieve efficient energy management and precision control.
4. Solar inverter: In solar inverters, VBP165R96SFD can be used as a high-power switching device for power conversion and inversion of solar panels to improve the efficiency and reliability of the inverter.
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