VBP165R67SE Product details
Product introduction:
VBP165R67SE is a VBsemi brand single N-channel MOSFET model manufactured with SJ_Deep-Trench technology for high performance and reliability. The package is TO247, suitable for various high power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 30(±V) | 3.5V | 67A | 36(mΩ) | SJ_Deep-Trench |
- VDS(V): 650V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- At VGS=10V, drain-source resistance is 36m次
- Maximum drain current ID is 67A
Domain and module applications:
1. Electric vehicles: VBP165R67SE is suitable for motor drive control modules of electric vehicles. It has high voltage and high current characteristics and can provide sufficient power output.
2. Industrial frequency converters: This MOSFET can be used in power switch modules in industrial frequency converters, helping to improve the operating efficiency and stability of factory equipment.
3. Solar power generation system: VBP165R67SE is suitable for inverter modules in solar power generation systems, which can effectively convert solar energy into electrical energy and output it to the power grid for power supply.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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