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2N7002KU-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi's 2N7002KU-VB is a single N-channel MOSFET manufactured using Trench technology with low drain-source voltage and moderate on-resistance. The device is suitable for low-voltage and low-power applications such as power management, signal switches and drivers. The 2N7002KU-VB adopts SOT23-3 package with a compact size, which is suitable for circuit designs that require high integration and small size.
VBsemi's 2N7002KU-VB is a single N-channel MOSFET manufactured using Trench technology with low drain-source voltage and moderate on-resistance. The device is suitable for low-voltage and low-power applications such as power management, signal switches and drivers. The 2N7002KU-VB adopts SOT23-3 package with a compact size, which is suitable for circuit designs that require high integration and small size.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | 3100mΩ | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2N7002KU-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench
- **Model**: 2N7002KU-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications：
### Applications and module examples
1. **Power management**:
- In low-voltage and low-power power management circuits, the 2N7002KU-VB can be used as a power switch or load switch. Its low drain-source voltage and moderate on-resistance ensure high efficiency and stability of the circuit.
2. **Signal switch**:
- As a signal switch, this MOSFET can be used to control the transmission and shielding of signals in the circuit. Its low drain-source voltage and moderate on-resistance ensure the stability and reliability of signal transmission.
3. **Driver**:
- In the driver circuit, the 2N7002KU-VB can be used to control the switching of low-power drivers. Its small size and high performance make it an ideal choice in the driver circuit.
In summary, VBsemi's 2N7002KU-VB MOSFET is suitable for a variety of low-voltage and low-power applications, especially in power management, signal switching and drivers.
1. **Power management**:
- In low-voltage and low-power power management circuits, the 2N7002KU-VB can be used as a power switch or load switch. Its low drain-source voltage and moderate on-resistance ensure high efficiency and stability of the circuit.
2. **Signal switch**:
- As a signal switch, this MOSFET can be used to control the transmission and shielding of signals in the circuit. Its low drain-source voltage and moderate on-resistance ensure the stability and reliability of signal transmission.
3. **Driver**:
- In the driver circuit, the 2N7002KU-VB can be used to control the switching of low-power drivers. Its small size and high performance make it an ideal choice in the driver circuit.
In summary, VBsemi's 2N7002KU-VB MOSFET is suitable for a variety of low-voltage and low-power applications, especially in power management, signal switching and drivers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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