Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
60V |
20（±V） |
1.7V |
0.3A |
|
3100mΩ |
2800mΩ |
|
### 2. Parameter Description:
- **Device Type**: Single N-channel MOSFET
- **Package**: SOT23-3
- **Maximum Drain-Source Voltage (VDS)**: 60V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **On-Resistance (RDS(ON))**: 3100mΩ @ VGS=4.5V, 2800mΩ @ VGS=10V
- **Drain Current (ID)**: 0.3A
- **Technical Features**: Trench
Domain and module applications：
### 3. Application Examples:
- **Power Management**: 2N7002KQ-7-VB is suitable for low-power power management modules, such as battery-powered portable devices. Its low on-resistance and high reliability characteristics can improve the efficiency of power management systems.
- **Signal Switch**: In signal switch modules, 2N7002KQ-7-VB can be used as a signal switch to achieve efficient control of signals. Its low on-resistance and high reliability characteristics can improve the performance of signal switch systems.
- **Motor Drive**: In small motor drive applications, 2N7002KQ-7-VB can be used as a motor control switch to achieve efficient control of motors. Its low on-resistance and high reliability characteristics can improve the efficiency and stability of motor drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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