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2N7002KQ-13-VB Product details
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### VBsemi 2N7002KQ-13-VB MOSFET Product Overview
VBsemi 2N7002KQ-13-VB is a single N-channel MOSFET for low power applications. Packaged in a SOT23-3 package, it is suitable for small circuit designs. This MOSFET uses trench structure technology, has low on-resistance and moderate current carrying capacity, and is suitable for applications requiring low power and high efficiency.
VBsemi 2N7002KQ-13-VB is a single N-channel MOSFET for low power applications. Packaged in a SOT23-3 package, it is suitable for small circuit designs. This MOSFET uses trench structure technology, has low on-resistance and moderate current carrying capacity, and is suitable for applications requiring low power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | 3100mΩ | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
### Detailed Specifications
- **Package:** SOT23-3
- **Configuration:** Single N-channel
- **VDS (Drain-Source Voltage):** 60V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Gate Threshold Voltage):** 1.7V
- **RDS(ON) (On-Resistance):**
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **ID (Continuous Drain Current):** 0.3A
- **Technology:** Trench Structure
- **Package:** SOT23-3
- **Configuration:** Single N-channel
- **VDS (Drain-Source Voltage):** 60V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Gate Threshold Voltage):** 1.7V
- **RDS(ON) (On-Resistance):**
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **ID (Continuous Drain Current):** 0.3A
- **Technology:** Trench Structure
Domain and module applications：
### Applications and Use Cases
VBsemi 2N7002KQ-13-VB MOSFET is suitable for various fields and modules:
1. **Electronic Switches:**
- **Low Power Switches:** Used for low power switches in circuits, such as low power LED light control.
- **Signal Switches:** Used for switches in control signal circuits, such as audio equipment and communication equipment.
2. **Analog Switches:**
- **Analog Signal Switches:** Used for analog signal switches, such as signal switchers in audio equipment.
3. **Sensor Interfaces:**
- **Sensor Signal Amplifiers:** Used for switches in sensor interface circuits, amplifying sensor signals and transmitting them to microcontrollers.
4. **Low Power Regulators:**
- **Low Power Regulators:** Used for power switches in low power regulators to provide stable output voltages.
VBsemi 2N7002KQ-13-VB MOSFET features low power and high efficiency, making it suitable for a variety of low power applications including electronic switching, sensor interfaces, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
