VBP165R22 Product details
Product introduction:
VBsemi's VBP165R22 is a single N-channel FET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product adopts planar process technology and is packaged as TO247. Its main features are low on-resistance, 280mΩ (at VGS=10V), and drain current (ID) of 22A.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 30(±V) | 3.5V | 22A | 280 (mΩ) | Plannar |
- Model: VBP165R22
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (when VGS=10V): 280m次
- Drain current (ID): 22A
- Technology: Flat process
-Package:TO247
Domain and module applications:
1. Industrial power module: Because VBP165R22 has high drain-source voltage and drain current, it is suitable for use in switching power supplies and inverters in industrial power modules.
2. Electric vehicle charging piles: The product's low on-resistance and high withstand voltage characteristics make it an ideal choice for power electronic devices in electric vehicle charging piles.
3. Renewable energy converters: In renewable energy converters such as solar inverters and wind power controllers, VBP165R22 can achieve high-efficiency energy conversion.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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