Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
650V |
30（±V） |
3.5V |
22A |
|
|
280 (mΩ) |
Plannar |
Detailed parameter description:
- Model: VBP165R22
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (when VGS=10V): 280m次
- Drain current (ID): 22A
- Technology: Flat process
-Package:TO247
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: Because VBP165R22 has high drain-source voltage and drain current, it is suitable for use in switching power supplies and inverters in industrial power modules.
2. Electric vehicle charging piles: The product's low on-resistance and high withstand voltage characteristics make it an ideal choice for power electronic devices in electric vehicle charging piles.
3. Renewable energy converters: In renewable energy converters such as solar inverters and wind power controllers, VBP165R22 can achieve high-efficiency energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
