Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
650V |
30（±V） |
3.5V |
18A |
|
|
430 (mΩ) |
Plannar |
Detailed parameter description:
- Model: VBP165R18
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO247
- Technology: Flat process
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 430 m次
- Maximum drain current (ID): 18A
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: Due to its high drain-source voltage and drain current capability, VBP165R18 can be used in industrial power modules to provide stable and reliable power output.
2. Electric vehicle charging piles: In electric vehicle charging piles, high-voltage and high-current switching devices are required to control the charging flow. The parameters of VBP165R18 make it an ideal choice for this application.
3. Inverter air conditioning system: The low on-resistance and high voltage capability of VBP165R18 make it suitable for power switch modules in inverter air conditioning systems, helping to achieve more energy-efficient air conditioning system designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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