Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
650V |
30（±V） |
3.5V |
12A |
|
|
800 (mΩ) |
Plannar |
Detailed parameter description:
- Model: VBP165R12
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 800m次
- Maximum drain current (ID): 12A
- Technology: Plannar
-Package:TO247
Domain and module applications：
Examples of applicable fields and modules:
This product is suitable for the following areas and modules:
1. Industrial power system: used for power switch control in industrial automation equipment, factory robots, electric vehicle charging piles and other fields.
2. Solar inverter: In a solar power generation system, as a key component of the inverter, it converts DC power into AC power.
3. High-performance power module: used for high-performance power control in high-end servers, data centers, communication equipment and other fields.
4. Electric vehicle drives: used as power switch control components for electric vehicle drives in electric vehicles, electric bicycles and electric scooters.
5. Industrial automation control: used for power switch control in industrial automation control systems, robots and power tools.
These fields and modules require high-power, high-reliability power switching components to achieve power control and conversion functions, and VBP165R12 is an ideal choice to meet these requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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