Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
650V |
30（±V） |
3.5V |
7A |
|
|
1200 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBP165R07
- Brand: VBsemi
- Type: Single N-channel power field effect transistor (MOSFET)
- Technology: Plannar
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 1200m次
- Drain current (ID): 7A
-Package:TO247
Domain and module applications：
Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power switch module: Due to its high drain-source voltage and drain current capability, it is suitable for power switch modules, such as power inverters, switching power supplies, etc.
2. High-performance electric vehicle control: It can be used for power switching and current control in electric vehicles, such as inverters and motor controllers in electric vehicle drive systems.
3. Industrial high-frequency converter: suitable for power switching and current regulation in industrial high-frequency converters to improve the conversion efficiency and stability of the converter.
4. Solar inverter: Inverter used in solar photovoltaic systems to convert solar power into AC power to supply household and industrial power systems.
The above are some examples. This product can also be used in other fields and modules that require high-performance power switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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