Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
650V |
30（±V） |
3.5V |
2A |
|
|
4500 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBP165R02
- Brand: VBsemi
- Type: Single N-channel power field effect transistor (MOSFET)
- Technology: Plannar
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 4500m次
- Drain current (ID): 2A
-Package:TO247
Domain and module applications：
Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power switch module: Due to its high drain-source voltage and drain current capability, it can be used in power switch modules, such as power inverters and switching power supplies.
2. LED lighting driver: suitable for power switch control in LED lighting drive circuits to help achieve high efficiency and stability of LED lighting systems.
3. Automotive electronic module: It can be used for functions such as electric vehicle charging control, motor drive and battery management in automotive electronic modules.
4. Industrial automation equipment: used for power switches and current control in industrial automation equipment to improve the reliability and efficiency of the equipment.
The above are some examples. This product can also be used in other fields and modules that require high-performance power switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
