VBP165R02 Product details
Product introduction:
VBsemi VBP165R02 is a single N-channel power field effect transistor (MOSFET) using Plannar technology for high-performance power electronic applications. The product features a drain-source voltage (VDS) of 650V, a drain current (ID) of 2A, and a gate-source voltage (VGS) of 30V. The package is TO247.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 30(±V) | 3.5V | 2A | 4500 (mΩ) | Plannar |
- Product model: VBP165R02
- Brand: VBsemi
- Type: Single N-channel power field effect transistor (MOSFET)
- Technology: Plannar
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 4500m次
- Drain current (ID): 2A
-Package:TO247
Domain and module applications:
This product is suitable for the following areas and modules:
1. Power switch module: Due to its high drain-source voltage and drain current capability, it can be used in power switch modules, such as power inverters and switching power supplies.
2. LED lighting driver: suitable for power switch control in LED lighting drive circuits to help achieve high efficiency and stability of LED lighting systems.
3. Automotive electronic module: It can be used for functions such as electric vehicle charging control, motor drive and battery management in automotive electronic modules.
4. Industrial automation equipment: used for power switches and current control in industrial automation equipment to improve the reliability and efficiency of the equipment.
The above are some examples. This product can also be used in other fields and modules that require high-performance power switches.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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