Product introduction：
VBP15R33SFD is a Single N structure high-power MOSFET with high voltage withstand capability, low threshold voltage, low drain-source resistance, and is suitable for multiple epitaxial processes (SJ_Multi-EPI). Its TO247 package is suitable for scenarios requiring high power handling capability, low threshold voltage and low drain-source resistance, including industrial power inverters, solar inverters, power electronic speed regulators and other fields.
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Domain and module applications：
for example:
1. Industrial power inverter:
VBP15R33SFD has high drain current (33A) and low drain-source resistance (90 mΩ). It is suitable as a power switching element in power inverters to control the start and stop of motors and speed adjustment, and improve industrial production equipment. efficiency and stability.
2. Solar inverter:
In a solar inverter, a high-power MOSFET is required to invert the DC power generated by the solar panel into AC power. The high voltage tolerance and low threshold voltage characteristics of the VBP15R33SFD make it ideal for use in inverters.
3. Power electronic speed regulator:
In power electronic speed regulators, power MOSFETs are required to achieve precise control and speed regulation of the motor. The high current handling capability and low drain-source resistance of the VBP15R33SFD make it suitable for power switching modules in power electronic speed regulators.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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