VBP15R33SFD Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 30(±V) | 3.5V | 33A | 90(mΩ) | SJ_Multi-EPI |
- Structure type: Single N
- Rated drain-source voltage (VDS): 500V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (VGS=10V): 90 m次
- Drain current (ID): 33A
- Technology: SJ_Multi-EPI
Package: TO247
Domain and module applications:
1. Industrial power inverter:
VBP15R33SFD has high drain current (33A) and low drain-source resistance (90 mΩ). It is suitable as a power switching element in power inverters to control the start and stop of motors and speed adjustment, and improve industrial production equipment. efficiency and stability.
2. Solar inverter:
In a solar inverter, a high-power MOSFET is required to invert the DC power generated by the solar panel into AC power. The high voltage tolerance and low threshold voltage characteristics of the VBP15R33SFD make it ideal for use in inverters.
3. Power electronic speed regulator:
In power electronic speed regulators, power MOSFETs are required to achieve precise control and speed regulation of the motor. The high current handling capability and low drain-source resistance of the VBP15R33SFD make it suitable for power switching modules in power electronic speed regulators.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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