VBP115MR04 Product details
Product introduction:
VBsemi's VBP115MR04 is a single N-type field effect transistor with a drain-source voltage (VDS) of 1500V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a 4A Drain current (ID). Manufactured using Plannar technology and packaged as TO247.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1500V | 30(±V) | 3.5V | 4A | 4500 (mΩ) | Plannar |
- Brand: VBsemi
- Product model: VBP115MR04
- Type: Single N-type field effect transistor
- VDS (drain-source voltage): 1500V
- VGS (gate-source voltage): 30V
- Vth (threshold voltage): 3.5V
- On-resistance at VGS=10V: 4500 m次
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package:TO247
Domain and module applications:
1. High-voltage DC transmission system: used for switches and control devices in DC transmission systems.
2. Power converter: suitable for converters and inverter units in power systems.
3. Industrial high-voltage equipment: used for high-voltage power management and control in industrial equipment.
4. Automotive electrification: Applicable to electric drive systems in electric vehicles and hybrid vehicles.
5. Wind power controller: used in power regulation and conversion modules in wind power systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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