Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
1500V |
30（±V） |
3.5V |
4A |
|
|
4500 (mΩ) |
Plannar |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBP115MR04
- Type: Single N-type field effect transistor
- VDS (drain-source voltage): 1500V
- VGS (gate-source voltage): 30V
- Vth (threshold voltage): 3.5V
- On-resistance at VGS=10V: 4500 m次
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package:TO247
Domain and module applications：
Application example:
1. High-voltage DC transmission system: used for switches and control devices in DC transmission systems.
2. Power converter: suitable for converters and inverter units in power systems.
3. Industrial high-voltage equipment: used for high-voltage power management and control in industrial equipment.
4. Automotive electrification: Applicable to electric drive systems in electric vehicles and hybrid vehicles.
5. Wind power controller: used in power regulation and conversion modules in wind power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
