VBP110MR24 Product details
Product introduction:
VBsemi's VBP110MR24 model is a single N-channel field effect transistor (Single N) with the following main parameters:
- Rated drain-source voltage (VDS): 1000V
- Rated gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- Drain-source on-resistance (mΩ) at VGS=10V: 420
- Maximum drain current (ID): 24A
- Technology: Plannar
-Package:TO247
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1000V | 30(±V) | 3.5V | 24A | 420 (mΩ) | Plannar |
- Product model: VBP110MR24
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Rated voltage: VDS=1000V, VGS=㊣30V
- Threshold voltage: Vth=3.5V
- Drain-source on-resistance (when VGS=10V): 420m次
- Maximum drain current: 24A
- Technology: Plannar
-Package:TO247
Domain and module applications:
- High-voltage industrial applications: Suitable for industrial control systems and power modules that require high rated voltage and large current, such as high-voltage frequency converters and high-voltage power equipment.
- Power converter module: can be used in inverters and motor driver modules in power systems to achieve efficient power conversion and control.
- High-performance power module: suitable for high-performance power systems that require stable output voltage and large current, such as industrial automation equipment and communication base stations.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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