Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
1000V |
30（±V） |
3.5V |
24A |
|
|
420 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBP110MR24
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Rated voltage: VDS=1000V, VGS=㊣30V
- Threshold voltage: Vth=3.5V
- Drain-source on-resistance (when VGS=10V): 420m次
- Maximum drain current: 24A
- Technology: Plannar
-Package:TO247
Domain and module applications：
Examples of applicable fields and modules:
- High-voltage industrial applications: Suitable for industrial control systems and power modules that require high rated voltage and large current, such as high-voltage frequency converters and high-voltage power equipment.
- Power converter module: can be used in inverters and motor driver modules in power systems to achieve efficient power conversion and control.
- High-performance power module: suitable for high-performance power systems that require stable output voltage and large current, such as industrial automation equipment and communication base stations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
