Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
1000V |
30（±V） |
3.5V |
12A |
|
|
880 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBP110MR12
- Brand: VBsemi
- Type: Single N-type MOSFET
- Maximum drain-source voltage (VDS): 1000V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 880
- Maximum drain current (ID): 12A
- Technology: Plannar
-Package:TO247
Domain and module applications：
Application examples:
The product is suitable for a variety of fields and modules, such as:
1. Power electronic systems: Can be used in high-voltage, high-power power electronic systems, such as inverters, frequency converters, power conditioners, etc.
2. Electric vehicles: Suitable for electric drive systems in electric vehicles, such as motor controllers, battery management systems, etc.
3. Industrial control: It can be used in power control, motor control and other modules in various industrial automation systems.
4. Solar power generation system: Due to its high withstand voltage capability and low on-resistance, it can be used as the power switching component in solar inverters to improve the efficiency and stability of the system.
The above are some examples of applications of this product in different fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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