VBP110MR12 Product details
Product introduction:
VBsemi's VBP110MR12 is a single N-type MOSFET using Plannar technology, with a drain-source voltage (VDS) of up to 1000V and excellent electrical performance. This product is packaged in TO247 and is suitable for various power application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1000V | 30(±V) | 3.5V | 12A | 880 (mΩ) | Plannar |
- Product model: VBP110MR12
- Brand: VBsemi
- Type: Single N-type MOSFET
- Maximum drain-source voltage (VDS): 1000V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 880
- Maximum drain current (ID): 12A
- Technology: Plannar
-Package:TO247
Domain and module applications:
Application examples:
The product is suitable for a variety of fields and modules, such as:
1. Power electronic systems: Can be used in high-voltage, high-power power electronic systems, such as inverters, frequency converters, power conditioners, etc.
2. Electric vehicles: Suitable for electric drive systems in electric vehicles, such as motor controllers, battery management systems, etc.
3. Industrial control: It can be used in power control, motor control and other modules in various industrial automation systems.
4. Solar power generation system: Due to its high withstand voltage capability and low on-resistance, it can be used as the power switching component in solar inverters to improve the efficiency and stability of the system.
The above are some examples of applications of this product in different fields and modules.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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