VBN165R13S Product details
Product introduction:
VBN165R13S is a single N-channel MOSFET model launched by VBsemi with high performance and reliability. Manufactured using SJ_Multi-EPI technology and packaged in TO262, it is suitable for various power electronic applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 650V | 30(±V) | 3.5V | 13A | 330(mΩ) | SJ_Multi-EPI |
- VDS(V): 650V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- At VGS=10V, the drain-source resistance is 330m次
- Maximum drain current ID is 13A
Domain and module applications:
1. Automotive electronics: VBN165R13S is suitable for electric vehicle drive control modules in automotive electronic systems to help improve the vehicle's power performance and energy utilization.
2. Solar inverter: This MOSFET can be used as a power switch module in a solar inverter, helping to improve the conversion efficiency and stability of the solar power generation system.
3. Industrial automation: VBN165R13S is suitable for motor control modules in the field of industrial automation and can be used to improve the accuracy and efficiency of production lines.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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