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VBN165R13S Product details

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Product introduction：

Product introduction:
VBN165R13S is a single N-channel MOSFET model launched by VBsemi with high performance and reliability. Manufactured using SJ_Multi-EPI technology and packaged in TO262, it is suitable for various power electronic applications.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO262 Single-N 650V 30（±V） 3.5V 13A 330(mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS(V): 650V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- At VGS=10V, the drain-source resistance is 330m次
- Maximum drain current ID is 13A

Domain and module applications：

Examples of applicable fields and modules:
1. Automotive electronics: VBN165R13S is suitable for electric vehicle drive control modules in automotive electronic systems to help improve the vehicle's power performance and energy utilization.
2. Solar inverter: This MOSFET can be used as a power switch module in a solar inverter, helping to improve the conversion efficiency and stability of the solar power generation system.
3. Industrial automation: VBN165R13S is suitable for motor control modules in the field of industrial automation and can be used to improve the accuracy and efficiency of production lines.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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