Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO262 |
Single-N |
650V |
30（±V） |
3.5V |
11A |
|
|
310(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBN165R11SE
- MOSFET type: Single N
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 310m次
- Maximum continuous drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package: TO262
Domain and module applications：
Examples of applicable fields and modules:
1. Electric vehicle power system: Due to its high voltage tolerance and on-resistance capability, VBN165R11SE is suitable for power conversion module and charger control of electric vehicles.
2. Solar inverter: As a key component in a solar inverter, VBN165R11SE can convert DC power generated by solar panels into AC power.
3. Industrial automation equipment: In industrial automation equipment, VBN165R11SE can be used as power switches and control components, such as PLC controllers and robot control systems.
4. LED lighting: In LED lighting applications, VBN165R11SE can be used as a switching tube in the power driver to achieve efficient power conversion and dimming control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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