VBN165R11SE Product details
Product introduction:
VBsemi VBN165R11SE is a Single N MOSFET, using SJ_Deep-Trench technology and packaged in TO262. Offers high performance and stability for a variety of power control and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 650V | 30(±V) | 3.5V | 11A | 310(mΩ) | SJ_Deep-Trench |
- Brand: VBsemi
- Product model: VBN165R11SE
- MOSFET type: Single N
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 310m次
- Maximum continuous drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package: TO262
Domain and module applications:
1. Electric vehicle power system: Due to its high voltage tolerance and on-resistance capability, VBN165R11SE is suitable for power conversion module and charger control of electric vehicles.
2. Solar inverter: As a key component in a solar inverter, VBN165R11SE can convert DC power generated by solar panels into AC power.
3. Industrial automation equipment: In industrial automation equipment, VBN165R11SE can be used as power switches and control components, such as PLC controllers and robot control systems.
4. LED lighting: In LED lighting applications, VBN165R11SE can be used as a switching tube in the power driver to achieve efficient power conversion and dimming control.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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